? 2004 ixys all rights reserved g = gate c = collector e = emitter tab = electrically isolated symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c54a i c110 t c = 110 c28a i f110 t c = 110 c8a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t j = 125 c, r g = 10 ? i cm = 120 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1 min 2500 v~ i sol = 1ma, t = 1 s 3000 v~ f c mounting force 22...130/5...29 n/lb maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces t=25 c50 a v ge = 0 v t=125 c 250 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 35a, v ge = 15 v 2.8 3.5 v note 2 features z silicon chip on dcb substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z igbt and anti-parallel fred for resonant power supplies - induction heating - rice cookers z mos gate turn-on - drive simplicity z fast recovery expitaxial diode (fred) - soft recovery with low i rm advantages z saves space (two devices in one package) z easy to mount z reduces assembly time and cost ds99204(09/04) high voltage igbt with diode (electrically isolated back surface) ixgr 35n120bd1 v ces = 1200 v i c25 =54a v ce(sat) = 3.5 v t fi(typ) = 160 ns advanced technical information isoplus247 (ixgr) g c e (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 35n120bd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 35a; v ce = 10 v, 28 38 s note 2. c ies 2300 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 190 pf c res 80 pf q g 140 nc q ge i c = 40a, v ge = 15 v, v ce = 0.5 v ces 20 nc q gc 50 nc t d(on) 40 ns t ri 50 ns e on 0.9 mj t d(off) 270 500 ns t fi 160 300 ns e off 3.8 7.0 mj t d(on) 45 ns t ri 60 ns e on 1.9 mj t d(off) 380 ns t fi 400 ns e off 8.0 mj r thjc 0.5 k/w r thck 0.25 k/w inductive load, t j = 125 c i c = 35a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 3 ? note 1 inductive load, t j = 25 c i c = 35 a; v ge = 15 v v ce = 0.8 v ces ; r g = r off = 3 ? note 1. notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 2. pulse test, t 300 s, duty cycle d 2 %. reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10 a, v ge = 0 v 3.3 v i f = 10 a, v ge = 0 v, t j = 125 c 2.2 v i rm i f = 10 a; -di f /dt = 100 a/ s, v r = 100 v 4.0 a t rr v ge = 0 v; t j = 125 c 190 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 40 n s r thjc 2.5 k/w ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 isoplus247 outline
|
